Samsung Electronics has announced that it had started mass producing the industry’s first 64GB DDR4 registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) “through silicon via” (TSV) package technology. The new high-density, high-performance modules are designed for next-generation enterprise servers and cloud-based applications.
The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of four 4Gb DDR4 DRAM dies. The low-power chips are manufactured using Samsung’s 20nm-class process technology and 3D TSV package technology. The 64GB DDR4 modules are rated to run at 2133MHz. The modules are compatible with next-generation servers based on the Xeon E5 "Haswell-EP" chips.
To build a 3D TSV DRAM package, the DDR4 dies are ground down as thin as a few dozen micrometers, then pierced to contain hundreds of fine holes. They are vertically connected through electrodes that are passed through the holes. As a result, the new 64GB TSV module performs twice as fast as a 64GB module that uses wire bonding packaging, while consuming approximately half the power.
While this is cool, I wish they'd come back with their famous low voltage low profile miracle memory that sold out as soon as it was discovered. I got a pair and I wish I had bought more.
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